低功耗手机对讲机专用晶振X1G005591001900
贴片晶振 | 频率 | 型号 | 尺寸(长宽高) | 输出波 | 电源电压 | 工作温度 |
X1G005591001100 | 25.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001200 | 25.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001300 | 20.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001400 | 20.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001500 | 50.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001600 | 50.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001700 | 48.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001800 | 48.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001900 | 24.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002000 | 24.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002100 | 40.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002200 | 40.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002300 | 16.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002400 | 16.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002500 | 12.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002600 | 12.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002700 | 10.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002800 | 10.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002900 | 27.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591003000 | 27.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591006700 | 6.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591006800 | 7.680000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591006900 | 74.250000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007000 | 88.888000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007100 | 88.888000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007200 | 12.500000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007300 | 148.500000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007400 | 74.250000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007500 | 57.272720MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007600 | 37.125000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007700 | 19.200000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007800 | 6.005284MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007900 | 57.209760MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008000 | 10.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008100 | 133.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008200 | 32.400000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008300 | 22.579200MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008400 | 44.236800MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008500 | 1.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008600 | 4.915200MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008700 | 1.843200MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008800 | 33.333000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008900 | 56.602205MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591009000 | 36.810000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591009200 | 16.384000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591009300 | 19.922944MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
爱普生可编程振荡器的优势特点自然是其本身参数可以接受定制,既然是可编程的晶体振荡器就意味着其频点参数是可以根据客户的需求定制,从频点、工作电压到频率稳定度等参数都可以定制。
在购买和选择具体品牌的可编程晶振之前自然应该了解下其特性,其中不可忽视的就是很多晶振都要面对的气密性问题,因为可编程晶振是采用全自动化的半导体工艺打造的,所以完全不存在气密性问题而且还具备永不停振的优势。很多人容易把可编程晶振和温补晶振弄混淆,其实就是因为可编程晶振本身也具备温度自动补偿功能,除此之外低抖动和低功耗以及耐高温高压等特点让其成为手机对讲机以及数码相机等各种精密设备中不可缺少的。